Microelectronics: Systems and Devices
At the end of this curricular unit the student will have acquired the knowledge, skills and competences that allow him:
- Understand the basic concepts about the operation of some discrete systems and devices used in microelectronics such as MEMS, diodes, different types of transistors and thyristors
- Be able to distinguish the architecture of the previously mentioned elements
- Know the specific processing techniques and characteristic curves of the elements above
Pedro Miguel Cândido Barquinha
Weekly - 5
Total - 90
Although not mandatory, it is strongly recommended that the students were already approved in Semiconductor Materials and in Microelectronics I before attending the classes of this curricular unit.
•Physics of Semiconductor Devices, S. M. Sze, K. K. Ng, Wiley, 2012
•Foundations of MEMS, 2nd edition Chang Liu, Pearson/Prentice Hall, 2010
•Introductory MEMS, Fabrication and Applications, Thomas M. Adams, Richard A. Layton, Springer 2010
The UC is divided into theoretical classes and practical (including laboratory) classes.
The evaluation is continuous and consists of the accomplishment of two tests (or alternatively, a final exam about the same topics). Two reports/questionnaires on the practical classes (one on the manufacture of MEMS and the other on the characterization of transistors) are also evaluated. The weight of the tests / exams and reports in the final score is the same (50% / 50%).
- 1st test - 26th November, 11am (in lecture slot)
- 2nd test - 12th January, 11am
- Fabrication/characterization of MEMS (30%)
- Characterization of transistors (20%)
- approval in the practical component (average>= 9.5V)
- 50% theoretical component (or exam score) + 50% practical component
- pn and Schottky junctions: formation, device physics, IV and CV characteristics, comparison, applications
- Special pn junctions (Zener diode, Varactor, Esaki diode) and thyristors
- Bipolar transistors: formation, operation regimes and IV characteristics, BJT amplifiers
- JFET and MESFET: formation, operation regimes and IV characteristics, comparison to BJT
- MOSFET: MOS capacitor fundamentals, structure and types, device physics, IV characteristics, comparison with other FETs
- Miniaturization of transistors: advantages, implications on materials and device physics
- TFTs and EGTs: fabrication, comparison with MOSFETs, applications
- MEMS: introduction and applications, materials and technology, miniaturization
- Characterization and data analysis of diodes, BJTs, JFETs and MOSFETs.
- Fabrication and characterization of EGTs
- Fabrication and characterization of MEMS
- Problem solving about transistors and MEMS
Programs where the course is taught: