EDA for Nanoelectronics

Objectives

At the end of this curricular unit the student will have acquired the knowledge, skills and competences that allow them to: 

Understand

-        The limitations of the Schokley model in the current circuit design and the need to use new models. 

-        The need to use behavioral models to characterize the operation of passive devices in CMOS and other non-conventional nanoelectronic devices (eg non-volatile memory) 

-        Problems associated with models to be integrated in simulators

Be capable of:

-        Develop scripts for the determination of parameters of new characterization models of FETs, e.g. mosfets and TFTs (analytical and optimization-based approaches).

-        Develop in Verilog compact models for FETs and models for non-conventional devices 

To know : 

-        The operation of MOSFETs and the physical phenomena associated with the reduction of current MOSFET characterization models

-         Non-conventional nanoelectronic devices 

General characterization

Code

12730

Credits

6.0

Responsible teacher

Maria Helena Silva Fino

Hours

Weekly - 4

Total - 4

Teaching language

Português

Prerequisites

Available soon

Bibliography

Presentation support material, elaborated by the professor.

Journal papers 

Teaching method

Available soon

Evaluation method

Available soon

Subject matter

  1.  Introduction to Nano electronics.
  2. Nanometric scale transistor models  
  3. Thin-Film Transistor models.
  4.  Introduction to non-conventional nanoelectronic devices (e.g. memristors, spintronic devices, phase-changing devices) and/or passive devices . Working principles, applications and modeling.